general description product summary v ds @ t j,max 700v i dm 48a r ds(on),max < 0.52? q g,typ 33nc e oss @ 400v 4.4 m j applications 100% uis tested 100% r g tested package type ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and halogen free compliant ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, an d telecom orderable part number form minimum order quantity g d s top view g d s to-220f aotf12t60p to-263 d 2 pak d s g AOB12T60P symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. 15 power dissipation b 12* 9* continuous drain current repetitive avalanche energy c avalanche current c 50 dv/dt aotf12t60p to-220f pb free tube 1000 a 12 48 72 gate-source voltage t c =25c t c =100c drain-source voltage AOB12T60Pl to-263 green pulsed drain current c tape & reel i d AOB12T60P aotf12t60p parameter absolute maximum ratings t a =25c unless otherwise noted 30 v units a 12 9 v 800 600 mj derate above 25c p d w w/c 250 2 50 0.4 t c =25c v/ns mosfet dv/dt ruggedness peak diode recovery dv/dt j mj 750 single pulsed avalanche energy g c units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 AOB12T60P aotf12t60p c maximum junction-to-case 65 65 maximum junction-to-ambient a,d thermal characteristics parameter maximum case-to-sink a 0.5 -- c/w 0.5 2.5 c/w c/w 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB12T60P
symbol min typ max units 600 700 bv dss / ?tj 0.58 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 4.1 5 v r ds(on) 0.44 0.52 ? g fs 11 s v sd 0.73 1 v i s 12 a i sm 48 a c iss 2028 pf c oss 71 pf c o(er) 52 pf c o(tr) 94 pf c rss 13 pf r g 2.2 ? q g 33 50 nc q gs 13 nc m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =30v gate-body leakage current v gs =10v, v ds =480v, i d =12a total gate charge gate source charge switching parameters i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =40v, i d =6a v gs =10v, i d =6a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters gs q gd 10 nc t d(on) 52 ns t r 72 ns t d(off) 66 ns t f 42 ns t rr 483 ns q rr 7 m c gate drain charge body diode reverse recovery charge body diode reverse recovery time i f =12a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =12a, r g =25 w i f =12a,di/dt=100a/ m s,v ds =100v turn-on rise time turn-on delaytime a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =5a, v dd =150v, r g =25 ?, starting t j =25 c. h. c o(er) is a fixed capacitance that gives the same stored e nergy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. j. i sd i d , di/dt200a/ m s, v dd =400v, t j t j(max) . 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB12T60P
typical electrical and thermal characteristics 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =6a v gs =10v 0 5 10 15 20 25 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6v 6.5v 10v 7v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temparature 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB12T60P
typical electrical and thermal characteristics 0 3 6 9 12 15 0 12 24 36 48 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =480v i d =12a 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 10: current de-rating (note f) 0 2 4 6 8 10 0 100 200 300 400 500 600 eoss(uj) v ds (volts) figure 9: coss stored energy e oss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for to-220f pb free (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.1s 1s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for to-263 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB12T60P
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for to-263 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for to-220f pb free (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d t on t p d 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB12T60P
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss di/dt i rm rr vdd vdd q = - idt ar t rr 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB12T60P
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